Product Summary

The AT28LV010-20TI is a high-performance 3-volt only Electrically Erasable and Program-mable Read-Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28LV010-20TI offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20 µA.

Parametrics

AT28LV010-20TI absolute maximum ratings: (1)Temperature Under Bias: -55 to +125℃; (2)Storage Temperature: -65 to +150℃; (3)All Input Voltages (including NC Pins) with Respect to Ground: -0.6V to +6.25V; (4)All Output Voltages with Respect to Ground: -0.6V to VCC + 0.6V; (5)Voltage on OE and A9 with Respect to Ground: -0.6V to +13.5V.

Features

AT28LV010-20TI features: (1)Single 3.3V ±10% Supply; (2)Fast Read Access Time–200 ns; (3)Automatic Page Write Operation: Internal Address and Data Latches for 128 Bytes; Internal Control Timer; (4)Fast Write Cycle Time: Page Write Cycle Time – 10 ms Maximum; 1 to 128-Byte Page Write Operation; (5)Low Power Dissipation: 15 mA Active Current; 20 μA CMOS Standby Current; (6)Hardware and Software Data Protection; (7)DATA Polling for End of Write Detection ; (8)High Reliability CMOS Technology: Endurance: 105 Cycles; Data Retention: 10 Years; (9)JEDEC Approved Byte-Wide Pinout; (10)Industrial and Automotive Temperature Ranges ; (11)Green (Pb/Halide-free) Packaging Option.

Diagrams

AT28LV010-20TI block diagram

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AT28LV010-20TI
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